Product Summary

The SI4812BDY-T1-E3 is an N-Channel 30-V (D-S) MOSFET with Schottky Diode.

Parametrics

SI4812BDY-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage (MOSFET) VDS: 30V; (2)Reverse Voltage (Schottky): 30V; (3)Gate-Source Voltage (MOSFET) VGS: ±20V; (4)Continuous Drain Current (TJ = 150 ℃) (MOSFET) ID: 9.5A; (5)Pulsed Drain Current (MOSFET) IDM: 50A; (6)Continuous Source Current (MOSFET Diode Conduction) IS: 2.1A; (7)Average Forward Current (Schottky) IF: 1.4A; (8)Pulsed Forward Current (Schottky) IFM: 30A; (9)Single Pulse Avalanche Current IAS: 5A; (10)Avalanche Energy EAS: 1.25 mJ; (11)Maximum Power Dissipation (MOSFET) PD: 2.5W; (12)Operating Junction and Storage Temperature Range TJ, Tstg: - 55 to 150 ℃.

Features

SI4812BDY-T1-E3 features: (1)Halogen-free According to IEC 61249-2-21 Available; (2)LITTLE FOOT Plus Power MOSFET; (3)100 % Rg Tested.

Diagrams

SI4812BDY-T1-E3 diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
SI4812BDY-T1-E3
SI4812BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
0-1: $0.70
1-25: $0.55
25-50: $0.52
50-100: $0.49
Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
Si4800
Si4800
Other

Data Sheet
Negotiable 
SI4800,518
SI4800,518

MOSFET N-CH 30V 9A SOT96-1
Data Sheet
Negotiable 
SI4800BDY-T1-E3
SI4800BDY-T1-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
0-1: $0.46
1-25: $0.35
25-50: $0.33
50-100: $0.31
SI4800BDY-T1-GE3
SI4800BDY-T1-GE3
Vishay/Siliconix
MOSFET 30V 9.0A 2.5W 18.5mohm @ 10V
Data Sheet
0-1: $0.44
1-10: $0.31
10-50: $0.31
50-100: $0.30
SI4800DY
SI4800DY
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
Negotiable 
SI4800DY-E3
SI4800DY-E3
Vishay/Siliconix
MOSFET 30V 9A 2.5W
Data Sheet
Negotiable