Product Summary

The 29EE020-120-4C-PH is a 256K ×8 CMOS Page-Writ EEPROM manufactured with SST’s proprietary, high pe formance CMOS SuperFlash technology. The split-gat cell design and thick oxide tunneling injector attain bette reliability and manufacturability compared with alternat approaches. The 29EE020-120-4C-PH writes with a singl power supply. Internal Erase/Program is transparent to th user. The 29EE020-120-4C-PH conforms to JEDEC stan dard pinouts for byte-wide memories.

Parametrics

29EE020-120-4C-PH absolute maximum ratings: (1)Temperature Under Bias: -55 to +125℃; (2)Storage Temperature: -65 to +150℃; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD + 0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability (Ta = 25℃): 1.0W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300℃; (8)Surface Mount Lead Soldering Temperature (3 Seconds): 240℃; (9)Output Short Circuit Current: 100 mA.

Features

29EE020-120-4C-PH features: (1)Single Voltage Read and Write Operations; (2)Superior Reliability; (3)Low Power Consumption; (4)Fast Page-Write Operation; (5)Fast Read Access Time; (6)Latched Address and Data; (7)Automatic Write Timing ; (8)End of Write Detection; (9)Hardware and Software Data Protection; (10)Product Identification can be accessed via Software Operation; (11)TTL I/O Compatibility; (12)EDEC Standard.

Diagrams

29EE020-120-4C-PH functional block diagram