(China (Mainland))
Product Summary
The 2SK3502 is an N-Channel silicon power MOSFET. Applications of the 2SK3502 are: Switching regulators, UPS (Uninterruptible Power Supply), DC-DC converters.
Parametrics
2SK3502 absolute maximum ratings: (1)Drain-source voltage VDS: 600V; (2)Continuous drain current ID: ±10A; (3)Pulsed drain current ID(puls]: ±40A; (4)Gate-source voltage VGS: ±30V; (5)Repetitive or non-repetitive IAR: 10A; (6)Maximum Avalanche Energy EAS: 217mJ; (7)Maximum Drain-Source dV/dt dVDS/dt: 20kV/μs; (8)Peak Diode Recovery dV/dt dV/dt: 5kV/μs; (9)Max. power dissipation PD Ta=25℃: 2.16W; Tc=25℃ 50W; (10)Operating and storage Tch: +150℃; (11)temperature range: -55 to +150℃.
Features
2SK3502 features: (1)High speed switching; (2)Low on-resistance; (3)No secondary breadown; (4)Low driving power; (5)Avalanche-proof.
Diagrams
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 2SK3502-01MR |
Other |
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Data Sheet |
Negotiable |
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2SK3001 |
Other |
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Data Sheet |
Negotiable |
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2SK3009 |
Other |
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Data Sheet |
Negotiable |
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2SK3012 |
Other |
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Data Sheet |
Negotiable |
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2SK3013 |
Other |
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Data Sheet |
Negotiable |
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2SK3017 |
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MOSFET N-CH 900V 8.5A TO-3PN |
Data Sheet |
Negotiable |
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2SK3017(F) |
Toshiba |
MOSFET MOSFET N-Ch 900V 8.5A Rdson 1.25 Ohm |
Data Sheet |
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