(China (Mainland))
Product Summary
The MBM27C512-20 is a high speed 524,288 bit static CMOS erasable and electrically reprogrammable read only memory. The MBM27C512-20 is especially well suited for application where rapid turn around and/or bit pattern experimentation, and low power consumption are important. The MBM27C512-20 is fabricated using CMOS double polysilicon gate technology with single transistor stacked gate cells.
Parametrics
MBM27C512-20 absolute maximum ratings: (1)Temperature under bias TBIAS: -55 to 95℃; (2)Storage temperature TSTG: -65 to 125℃; (3)All inputs/outputs voltage with respect to GND VIN, VOUT: -0.6 to VCC+0.3 V; (4)Voltage on A9 with respect to GND VA9: -0.6 to 13.5 V; (5)VPP voltage with respect to GND VPP: -0.6 to 14 V; (6)Supply voltage with respect to GND VCC: -0.6 to 7 V.
Features
MBM27C512-20 features: (1)CMOS power consumption: standby: 550μW max, active: 165mW max; (2)65536 words × 8 bits organization fully decoded; (3)Single location programming; (4)Programmable utilizing the quick programming algorithm; (5)No clocks required; (6)TTL compatible inputs/outputs.
Diagrams
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