Product Summary

The TC74HCU04AFN is a high speed CMOS inverter fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Since the internal circuit is composed of a single stage inverter, the TC74HCU04AFN can be used in analog applications such as crystal oscllators. All inputs are equipped with protection circuits against static discharge or transient excess voltage.

Parametrics

TC74HCU04AFN absolute maximum ratings: (1)supply votalge range, VCC: -0.5 to 7V; (2)DC input voltage, VIN: -0.5 to VCC+0.5V; (3)DC output voltage, VOUT: -0.5 to VCC+0.5V; (4)input diode current, IIK: ±20mA; (5)output diode current, IOK: ±20mA; (6)DC output current, IOUT: ±25mA; (7)DC VCC/ground current, ICC: ±50mA; (8)power dissipation, PD: 500mW; (9)storage temperature, Tstg: -65 to 150℃.

Features

TC74HCU04AFN features: (1)high speed: tpd=4ns (typ) at VCC=5V; (2)low power dissipation: IC=1μA (max) at Ta=25℃; (3)high noise immunity: VNIH=VNIH=10% VCC(min); (4)output drive capability: 10LSTTL loads; (5)symmetrical output impedance: |IOH|=IOL=4mA (min); (6)balanced propagation delays: tpLH=tpHL; (7)wide operating voltage range: VCC(opr)=2V~6V; (8)pin and function compatible with 74LS04.

Diagrams

TC74HCU04AFN IEC logic diagram

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